| 型号： | ZXMHC6A07N8 | 厂家： | Diodes/美台 |
| 封装： | SO-8 | 系列： | MOSFETs |
| 描述： | 60V SO8 Complementary enhancement mode MOSFET H-Bridge | ||
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ZXMHC6A07N8
| 型号 | ZXMHC6A07N8 |
| 厂商 | Diodes/美台 |
| Description | 60V SO8 Complementary enhancement mode MOSFET H-Bridge |
| AEC Qualified | No |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | 2N2P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 |
| |VGS| (±V) | 20 |
| |IDS| @TA = +25°C (A) | 1.39, 1.28 |
| PD @TA = +25°C (W) | 0.87 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 250, 400 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 350, 600 |
| QG Typ @ |VGS| = 10V (nC) | 3.2, 5.1 |
| CISS Typ (pF) | 166, 141 |
| CISS Condition @|VDS| (V) | 40, 50 |
| Packages | SO-8 |
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