| 型号： | NVMYS1D6N04CLT1G | 厂家： | ON/安森美 |
| 封装： | Power 56 LFPAK | 系列： | MOSFET |
| 描述： | Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Channel | ||
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NVMYS1D6N04CLT1G
| Product (WPN) | NVMYS1D6N04CL |
| OPN | NVMYS1D6N04CLT1G |
| 厂商 | ON/安森美 |
| Price | 0.66 |
| Description | Power MOSFET 40V, 1.07 mΩ, 280 A, Single N?Channel |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 40 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 1.6 |
| ID Max (A) | 185 |
| Qg Typ @ VGS = 10 V (nC)? | 71 |
| MOSFET Type | Low-Medium Voltage |
| Gate Level | Logic |
| Silicon Family | PowerTrench? T6 |
| Configuration | Single |
| Package Type | Power 56 LFPAK |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 4301 |
| Vgs(th) Max (V) | 1.5 |
| PD Max (W) | 185 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 2.4 |
| Coss Typ (pF) | 1749 |
| Crss Typ (pF) | 46 |
| Qgd Typ @ VGS = 4.5 V (nC) | 13 |
| Qrr Typ (nC) | 159 |
| Qualification | Automotive |
| AEC Qualified | True |
| PPAP Capable | True |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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