| 型号： | FDD86113LZ | 厂家： | ON/安森美 |
| 封装： | DPAK | 系列： | MOSFET |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 100V , 5.5 A, 104 mΩ | ||
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FDD86113LZ
| Product (WPN) | FDD86113LZ |
| OPN | FDD86113LZ |
| 厂商 | ON/安森美 |
| Price | 0.43 |
| Description | N-Channel Shielded Gate PowerTrench? MOSFET 100V , 5.5 A, 104 mΩ |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 100 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 104 |
| ID Max (A) | 5.5 |
| Qg Typ @ VGS = 10 V (nC)? | 1.9 |
| MOSFET Type | Low-Medium Voltage |
| Gate Level | Logic |
| Silicon Family | PowerTrench? T1 |
| Configuration | Single |
| Package Type | DPAK |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 213 |
| Vgs(th) Max (V) | 3 |
| PD Max (W) | 29 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 156 |
| Coss Typ (pF) | 55 |
| Crss Typ (pF) | 2.4 |
| Qgd Typ @ VGS = 4.5 V (nC) | 0.7 |
| Qrr Typ (nC) | 20 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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