| 型号： | FDMC86102LZ | 厂家： | ON/安森美 |
| 封装： | Power 33 (u8FL) | 系列： | MOSFET |
| 描述： | N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ | ||
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FDMC86102LZ
| Product (WPN) | FDMC86102LZ |
| OPN | FDMC86102LZ |
| 厂商 | ON/安森美 |
| Price | 0.67 |
| Description | N-Channel Shielded Gate Power Trench? MOSFET 100V, 22A, 24mΩ |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 100 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 24 |
| ID Max (A) | 22 |
| Qg Typ @ VGS = 10 V (nC)? | 7.6 |
| MOSFET Type | Low-Medium Voltage |
| Gate Level | Logic |
| Silicon Family | PowerTrench? T1 |
| Configuration | Single |
| Package Type | Power 33 (u8FL) |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 969 |
| Vgs(th) Max (V) | 2.2 |
| PD Max (W) | 41 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 35 |
| Coss Typ (pF) | 181 |
| Crss Typ (pF) | 9 |
| Qgd Typ @ VGS = 4.5 V (nC) | 2.5 |
| Qrr Typ (nC) | 27 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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