| 型号： | FDS86267P | 厂家： | ON/安森美 |
| 封装： | SOIC-8 | 系列： | MOSFET |
| 描述： | P-Channel Shielded Gate PowerTrench® MOSFET -150V, -2.2A, 255mΩ | ||
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FDS86267P
| Product (WPN) | FDS86267P |
| OPN | FDS86267P |
| 厂商 | ON/安森美 |
| Price | 0.56 |
| Description | P-Channel Shielded Gate PowerTrench? MOSFET -150V, -2.2A, 255mΩ |
| Channel Polarity | P-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | -150 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 255 |
| ID Max (A) | -2.2 |
| Qg Typ @ VGS = 10 V (nC)? | 7 |
| MOSFET Type | Small Signal |
| Gate Level | Standard |
| Silicon Family | PowerTrench? T1 |
| Configuration | Single |
| Package Type | SOIC-8 |
| VGS Max (V) | 25 |
| Ciss Typ (pF) | 806 |
| Vgs(th) Max (V) | -4 |
| PD Max (W) | 2.5 |
| Coss Typ (pF) | 54 |
| Crss Typ (pF) | 1.6 |
| Qgd Typ @ VGS = 4.5 V (nC) | 1.9 |
| Qrr Typ (nC) | 157 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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