| 型号： | FDC8886 | 厂家： | ON/安森美 |
| 封装： | SC-6 | 系列： | MOSFET |
| 描述： | N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ | ||
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FDC8886
| Product (WPN) | FDC8886 |
| OPN | FDC8886 |
| 厂商 | ON/安森美 |
| Price | 0.15 |
| Description | N-Channel Power Trench? MOSFET, 30 V, 6.5 A, 23 mΩ |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 30 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 23 |
| ID Max (A) | 6.5 |
| Qg Typ @ VGS = 10 V (nC)? | 2.5 |
| MOSFET Type | Small Signal |
| Gate Level | Logic |
| Silicon Family | PowerTrench? T1 |
| Configuration | Single |
| Package Type | SC-6 |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 348 |
| Vgs(th) Max (V) | 3 |
| PD Max (W) | 1.6 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 36 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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