| 型号： | NTMFS4C09NT1G | 厂家： | ON/安森美 |
| 封装： | Power 56 (SO-8FL) | 系列： | MOSFET |
| 描述： | Single N-Channel Power MOSFET 30V, 52A, 5.8mΩ | ||
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NTMFS4C09NT1G
| Product (WPN) | NTMFS4C09N |
| OPN | NTMFS4C09NT1G |
| 厂商 | ON/安森美 |
| Price | 0.22 |
| Description | Single N-Channel Power MOSFET 30V, 52A, 5.8mΩ |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 30 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 5.8 |
| ID Max (A) | 52 |
| Qg Typ @ VGS = 10 V (nC)? | 10.9 |
| MOSFET Type | Low-Medium Voltage |
| Gate Level | Logic |
| Silicon Family | PowerTrench? T6 |
| Configuration | Single |
| Package Type | Power 56 (SO-8FL) |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 1252 |
| Vgs(th) Max (V) | 2.1 |
| PD Max (W) | 25.5 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 8.5 |
| Coss Typ (pF) | 610 |
| Crss Typ (pF) | 126 |
| Qgd Typ @ VGS = 4.5 V (nC) | 5.4 |
| Qrr Typ (nC) | 1.515 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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