| 型号： | NTJD5121NT1G | 厂家： | ON/安森美 |
| 封装： | SC-6 | 系列： | MOSFET |
| 描述： | Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω | ||
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NTJD5121NT1G
| Product (WPN) | NVJD5121NT1G-M06 |
| OPN | NTJD5121NT1G |
| 厂商 | ON/安森美 |
| Price | 0.04 |
| Description | Dual N?Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 60 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 1600 |
| ID Max (A) | 0.35 |
| Qg Typ @ VGS = 10 V (nC)? | 0.9 |
| MOSFET Type | Small Signal |
| Gate Level | Logic |
| Silicon Family | PowerTrench? T1 |
| Package Type | SC-6 |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 26 |
| Vgs(th) Max (V) | 2.5 |
| PD Max (W) | 0.25 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 2500 |
| Qg Typ @ VGS = 4.5 V (nC) | 10 |
| Coss Typ (pF) | 4.4 |
| Crss Typ (pF) | 2.5 |
| Qgd Typ @ VGS = 4.5 V (nC) | 0.28 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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