| 型号： | NTMYS9D3N06CLTWG | 厂家： | ON/安森美 |
| 封装： | Power 56 LFPAK | 系列： | MOSFET |
| 描述： | Power MOSFET 60 V, 9.2mΩ, 50 A, Single N-Channel | ||
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NTMYS9D3N06CLTWG
| Product (WPN) | NTMYS9D3N06CL |
| OPN | NTMYS9D3N06CLTWG |
| 厂商 | ON/安森美 |
| Price | 0.73 |
| Description | Power MOSFET 60 V, 9.2m?, 50 A, Single N-Channel |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 60 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 9.2 |
| ID Max (A) | 50 |
| Qg Typ @ VGS = 10 V (nC)? | 9.5 |
| MOSFET Type | Low-Medium Voltage |
| Gate Level | Logic |
| Silicon Family | PowerTrench? T6 |
| Configuration | Single |
| Package Type | Power 56 LFPAK |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 880 |
| Vgs(th) Max (V) | 2 |
| PD Max (W) | 46 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 13 |
| Qg Typ @ VGS = 4.5 V (nC) | 4.5 |
| Coss Typ (pF) | 450 |
| Crss Typ (pF) | 11 |
| Qrr Typ (nC) | 18 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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