| 型号： | FQB55N10TM | 厂家： | ON/安森美 |
| 封装： | D2PAK | 系列： | MOSFET |
| 描述： | Power MOSFET, N-Channel, QFET®, 100 V, 55 A, 26 mΩ, D2PAK | ||
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FQB55N10TM
| Product (WPN) | FQB55N10 |
| OPN | FQB55N10TM |
| 厂商 | ON/安森美 |
| Price | 1.04 |
| Description | Power MOSFET, N-Channel, QFET?, 100 V, 55 A, 26 mΩ, D2PAK |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 100 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 26 |
| ID Max (A) | 55 |
| Qg Typ @ VGS = 10 V (nC)? | 75 |
| MOSFET Type | Low-Medium Voltage |
| Gate Level | Standard |
| Silicon Family | PowerTrench? T1 |
| Configuration | Single |
| Package Type | D2PAK |
| VGS Max (V) | 25 |
| Ciss Typ (pF) | 2100 |
| Vgs(th) Max (V) | 4 |
| PD Max (W) | 155 |
| Coss Typ (pF) | 640 |
| Crss Typ (pF) | 130 |
| Qgd Typ @ VGS = 4.5 V (nC) | 36 |
| Qrr Typ (nC) | 380 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | False |
| Lead Free | True |
| Status | Active |
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