| 型号： | FDB1D7N10CL7 | 厂家： | ON/安森美 |
| 封装： | D2PAK7 | 系列： | MOSFET |
| 描述： | Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ, 100V PTNG NMOS | ||
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FDB1D7N10CL7
| Product (WPN) | FDB1D7N10CL7 |
| OPN | FDB1D7N10CL7 |
| 厂商 | ON/安森美 |
| Price | 3.44 |
| Description | Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ, 100V PTNG NMOS |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 100 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 1.75 |
| ID Max (A) | 268 |
| Qg Typ @ VGS = 10 V (nC)? | 116 |
| MOSFET Type | Low-Medium Voltage |
| Gate Level | Standard |
| Silicon Family | PowerTrench? T8 |
| Configuration | Single |
| Package Type | D2PAK7 |
| VGS Max (V) | 20 |
| Ciss Typ (pF) | 8285 |
| Vgs(th) Max (V) | 4 |
| PD Max (W) | 250 |
| Coss Typ (pF) | 5025 |
| Crss Typ (pF) | 50 |
| Qrr Typ (nC) | 869 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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