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NVBG160N120SC1

型号: NVBG160N120SC1 厂家: ON/安森美
封装: D2PAK7 (TO-263-7L HV) 系列: MOSFET
描述: Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK−7L
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NVBG160N120SC1

Product (WPN) NVBG160N120SC1
OPN NVBG160N120SC1
厂商 ON/安森美
Price 5.47
Description Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK?7L
Channel Polarity N-Channel
Technology Silicon Carbide
V(BR)DSS Min (V) 1200
RDS(on) Max @ VGS = 10 V (mΩ)? 160
ID Max (A) 19.5
Qg Typ @ VGS = 10 V (nC)? 33.8
MOSFET Type High Voltage
Gate Level Standard
Silicon Family M1
Configuration Single
Package Type D2PAK7 (TO-263-7L HV)
Coss Typ (pF) 50.7
Tj Max (°C) 175
Qualification Automotive
AEC Qualified True
PPAP Capable True
Halide Free True
Lead Free True
Status Active

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  • 深圳市荣森泰电子有限公司
    型号:NVBG160N120SC1
    厂家:ON/安森美
    封装:D2PAK7 (TO-263-7L HV)
    批号:new
    描述:Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK−7L
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