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NTBG060N090SC1

型号: NTBG060N090SC1 厂家: ON/安森美
封装: D2PAK7 (TO-263-7L HV) 系列: MOSFET
描述: Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
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NTBG060N090SC1

Product (WPN) NTBG060N090SC1
OPN NTBG060N090SC1
厂商 ON/安森美
Price 6.41
Description Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
Channel Polarity N-Channel
Technology Silicon Carbide
V(BR)DSS Min (V) 900
RDS(on) Max @ VGS = 10 V (mΩ)? 60
ID Max (A) 44
Qg Typ @ VGS = 10 V (nC)? 88
MOSFET Type High Voltage
Gate Level Standard
Silicon Family M2
Configuration Single
Package Type D2PAK7 (TO-263-7L HV)
Coss Typ (pF) 115
Tj Max (°C) 175
Qualification Standard
AEC Qualified False
PPAP Capable False
Halide Free True
Lead Free True
Status Active

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  • 深圳市荣森泰电子有限公司
    型号:NTBG060N090SC1
    厂家:ON/安森美
    封装:D2PAK7 (TO-263-7L HV)
    批号:new
    描述:Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
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