| 型号： | FQP6N80C | 厂家： | ON/安森美 |
| 封装： | TO-220 | 系列： | MOSFET |
| 描述： | Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220 | ||
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FQP6N80C
| Product (WPN) | FQP6N80C |
| OPN | FQP6N80C |
| 厂商 | ON/安森美 |
| Price | 1.04 |
| Description | Power MOSFET, N-Channel, QFET?, 800 V, 5.5 A, 2.5 ?, TO-220 |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 800 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 2500 |
| ID Max (A) | 5.5 |
| Qg Typ @ VGS = 10 V (nC)? | 21 |
| MOSFET Type | High Voltage |
| Gate Level | Standard |
| Silicon Family | PowerTrench? T1 |
| Configuration | Single |
| Package Type | TO-220 |
| VGS Max (V) | 30 |
| Ciss Typ (pF) | 1010 |
| Vgs(th) Max (V) | 5 |
| PD Max (W) | 158 |
| Coss Typ (pF) | 90 |
| Crss Typ (pF) | 8 |
| Qgd Typ @ VGS = 4.5 V (nC) | 9 |
| Qrr Typ (nC) | 5400 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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