| 型号： | FQB8N90CTM | 厂家： | ON/安森美 |
| 封装： | D2PAK | 系列： | MOSFET |
| 描述： | Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK | ||
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FQB8N90CTM
| Product (WPN) | FQB8N90CTM |
| OPN | FQB8N90CTM |
| 厂商 | ON/安森美 |
| Price | 1.26 |
| Description | Power MOSFET, N-Channel, QFET?, 900 V, 6.3 A, 1.9 ?, D2PAK |
| Channel Polarity | N-Channel |
| Technology | Silicon |
| V(BR)DSS Min (V) | 900 |
| RDS(on) Max @ VGS = 10 V (mΩ)? | 1900 |
| ID Max (A) | 6.3 |
| Qg Typ @ VGS = 10 V (nC)? | 35 |
| MOSFET Type | High Voltage |
| Gate Level | Standard |
| Silicon Family | PowerTrench? T1 |
| Configuration | Single |
| Package Type | D2PAK |
| VGS Max (V) | 5 |
| Ciss Typ (pF) | 1600 |
| Vgs(th) Max (V) | 5 |
| PD Max (W) | 171 |
| Coss Typ (pF) | 130 |
| Crss Typ (pF) | 12 |
| Qgd Typ @ VGS = 4.5 V (nC) | 14 |
| Qrr Typ (nC) | 5800 |
| Qualification | Standard |
| AEC Qualified | False |
| PPAP Capable | False |
| Halide Free | True |
| Lead Free | True |
| Status | Active |
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