| 型号： | AFGB30T65RQDN | 厂家： | onsemi/安森美 |
| 封装： | D2PAK-3 | 系列： | IGBT |
| 描述： | TO-263-2 | ||
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AFGB30T65RQDN
| 产品系列 | AFGB30T65RQDN |
| 品牌 | onsemi/安森美 |
| 状态 | Active |
| Compliance | Pb A P |
| Family | - |
| V(BR)CES Typ (V) | 650 |
| IC Max (A) | 30 |
| VCE(sat) Typ (V) | 1.58 |
| VF Typ (V) | 1.71 |
| Eoff Typ (mJ) | 0.56 |
| Eon Typ (mJ) | 0.78 |
| Trr Typ (ns) | 44 |
| Irr Typ (A) | 18.4 |
| Gate Charge Typ (nC) | 38 |
| Short Circuit Withstand (μs) | 5 |
| EAS Typ (mJ) | ~NA~ |
| PD Max (W) | 235.48 |
| Co-Packaged Diode | Yes |
| Package Type | D2PAK-3 / TO-263-2 |
| MSL Type | 1 |
| MSL Temp (°C) | 260 |
| Reference Price | 0 |
| 产品 | IGBT |
| LAY_TABLE_INDEX | 0 |
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