| 型号： | NGTD21T65F2WP | 厂家： | onsemi/安森美 |
| 封装： | - | 系列： | IGBT |
| 描述： | |||
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NGTD21T65F2WP
| 产品系列 | NGTD21T65F2WP |
| 品牌 | onsemi/安森美 |
| 状态 | Obsolete |
| Compliance | H Pb |
| Family | - |
| V(BR)CES Typ (V) | 650 |
| IC Max (A) | - |
| VCE(sat) Typ (V) | 1.7 |
| VF Typ (V) | - |
| Eoff Typ (mJ) | - |
| Eon Typ (mJ) | - |
| Trr Typ (ns) | - |
| Irr Typ (A) | - |
| Gate Charge Typ (nC) | - |
| Short Circuit Withstand (μs) | 5 |
| EAS Typ (mJ) | - |
| PD Max (W) | - |
| Co-Packaged Diode | - |
| Package Type | - |
| MSL Type | NA |
| MSL Temp (°C) | 0 |
| Reference Price | 0 |
| 产品 | IGBT |
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